An integrated split and dummy gates MOSFET with fast turn-off and reverse recovery characteristics by Chen, Weizhong, Mou, Liuting, Qin, Haifeng, Zhang, Hongsheng, Han, Zhengsheng

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A 19 ps Precision and 170 M Samples/s Time-to-Digital Converter Implemented in FPGA with Online Calibration by Zhang, Mengdi, Zhao, Ye, Han, Zhengsheng, Zhao, Fazhan

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A FIN-LDMOS with Bulk Electron Accumulation Effect by Chen, Weizhong, Duan, Zubing, Zhang, Hongsheng, Han, Zhengsheng, Wang, Zeheng

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Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects by Wei, Zikai, Chen, Weizhong, Wang, Haishi, Qin, Haifeng, Han, Zhengsheng

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A lateral superjunction SOI LDMOS with double-conductive channels by Chen, Weizhong, Qin, Haifeng, Lin, Xuwei, Huang, Yi, Han, Zhengsheng

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Three-Dimensional TID Hardening Design for 14 nm Node SOI FinFETs by Lu, Peng, Yang, Can, Li, Yifei, Li, Bo, Han, Zhengsheng

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A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region by Chen, Weizhong, Huang, Yao, Li, Shun, Huang, Yi, Han, Zhengsheng

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A snapback-free reverse-conducting IGBT with multiple extraction channels by Chen, Weizhong, Lin, Xuwei, Li, Shun, Huang, Yao, Huang, Yi, Han, Zhengsheng

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The Simulation Study of the SOI Trench LDMOS With Lateral Super Junction by Chen, Weizhong, He, Lijun, Han, Zhengsheng, Huang, Yi

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A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops by Duoli, Li, Chuanbin, Zeng, Wei, Dou, Linchun, Gao, Weiwei, Yan, Bo, Li, Yang, Huang, Tao, Liu, Long, Xing, Hainan, Liu, Jiajun, Luo, Zhengsheng, Han

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Characteristics of HfO2/Hf-based bipolar resistive memories by 毕津顺 韩郑生

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Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique by Li, Yangyang, Li, Xiaojing, Li, Bo, Gao, Linchun, Yan, Weiwei, Wang, Fangfang, Li, Duoli, Zeng, Chuanbin, Luo, Jiajun, Han, Zhengsheng

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Low-Cost and Highly Manufacturable Strained-Si Channel Technique for Strong Hole Mobility Enhancement on 35-nm Gate Length pMOSFETs by Xu, Qiuxia, Duan, Xiaofeng, Liu, Haihua, Han, Zhengsheng, Ye, Tianchun

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Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies by Zhang, Zhangang, Liu, Jie, Hou, Mingdong, Gu, Song, Liu, Tianqi, Zhao, Fazhan, Geng, Chao, Xi, Kai, Sun, Youmei, Yao, Huijun, Luo, Jie, Duan, Jinglai, Mo, Dan, Liu, Gang, Han, Zhengsheng, En, Yunfei

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Numerical investigation on the convergence of self-consistent Schrödinger-Poisson equations in semiconductor device transport simulation by Zhu, Junyan, Cao, Jiang, Song, Chen, Li, Bo, Han, Zhengsheng

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Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs by 滕渊 朱阳军 韩郑生 叶甜春

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Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism by Zhu, Junyan, Cao, Jiang, Song, Chen, Li, Bo, Han, Zhengsheng

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Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State by Zhang, Xinyi, Wu, Zhicheng, Bu, Jianhui, Li, Bo, Han, Zhengsheng

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Bulk Electron Accumulation LDMOS With Extended Superjunction Gate by Chen, Weizhong, Qin, Haifeng, Zhang, Hongsheng, Han, Zhengsheng

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A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect by Chen, Weizhong, Qin, Haifeng, Huang, Yuanxi, Huang, Yi, Han, Zhengsheng

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