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Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD
by
Sleptsova, Anastasia A.
,
Chernykh, Sergey V.
,
Podgorny, Dmitry A.
,
Zhilnikov, Ilya A.
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Modern Electronic Materials
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Subjects
Algan/Gan Hemt
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Aluminum Gallium Nitrides
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Chemical Vapor Deposition
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Current-Voltage Curves
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Dielectrics
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Film Growth
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Gallium Nitrides
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Gas Flow
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Heterostructures
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High Electron Mobility Transistors
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Icp Cvd
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Inductively Coupled Plasma
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Nitrides
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Optimization
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Parameters
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Passivation
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Passivity
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Plasmachemical Deposition
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Semiconductor Devices
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Semiconductor Industry
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