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High-temperature electrical transport in AlxGa1−xN∕GaN modulation doped field-effect transistors
by
Lu, Changzhi
,
Xie, Xuesong
,
Zhu, Xiudian
,
Wang, Dongfeng
,
Khan, Arif
,
Diagne, Ibrahima
,
Mohammad, S. Noor
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Journal of applied physics
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High-temperature electrical transport in Al x Ga 1 − x N ∕ Ga N modulation doped field-effect transistors
by
Lu, Changzhi
,
Xie, Xuesong
,
Zhu, Xiudian
,
Wang, Dongfeng
,
Khan, Arif
,
Diagne, Ibrahima
,
Mohammad, S. Noor
Published in
Journal of applied physics
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The temperature characteristics of AlGaN/GaN double heterostructure HEMTs
by
Changzhi Lu
,
Shiwei Feng
,
Dongfeng Wang
,
Xiudian Zhu
,
Zhifang Fan
,
Morkoc, H.
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Journal Of Applied Physics
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Aluminum Gallium Nitride
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American Institute Of Physics:jisc Collections:transitional Journals Agreement 2021-23 (Reading List)
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