Even‐Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon by Pavlov, Sergey G., Abrosimov, Nikolay V., Shuman, Valentina B., Portsel, Leonid М., Lodygin, Аnatoly N., Astrov, Yuri A., Zhukavin, Roman Kh, Shastin, Valery N., Irmscher, Klaus, Pohl, Andreas, Hübers, Heinz‐Wilhelm

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First Terahertz-range Experiments on Pump – Probe Setup at Novosibirsk free Electron Laser by Choporova, Yulia Yu, Gerasimov, Vasily V., Knyazev, Boris A., Sergeev, Sergey M., Shevchenko, Oleg A., Zhukavin, Roman Kh, Abrosimov, Nikolay V., Kovalevsky, Konstantin A., Ovchar, Vladimir K., Hübers, Heinz-Wilhelm, Kulipanov, Gennady N., Shastin, Valery N., Schneider, Harald, Vinokurov, Nikolay A.

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Optimizing the Operation of Terahertz Silicon Lasers by Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Tsyplenkov, V.V., Kovalevsky, K.A., Shastin, V.N.

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Tunable Stokes Shift in Uniaxially Stressed Silicon with Shallow Donors by Zhukavin, Roman Kh, Pavlov, Sergey G., Pohl, Andreas, Abrosimov, Nikolay V., Riemann, Helge, Redlich, Britta, Hubers, Heinz-Wilhelm, Shastin, Valery N.

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Terahertz silicon lasers by Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Tsyplenkov, V.V., Kovalevsky, K.A., Shastin, V.N.

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Relaxation Times of Arsenic Excited Donor States in Germanium by Zhukavin, Roman Kh, Shastin, Valery N., Kovalevsky, Konstantin A., Choporova, Yulia Yu, Gerasimov, Vasily V., Tsyplenkov, Veniamin V., Knyazev, Boris A., Pavlov, Sergey G., Abrosimov, Nikolay V., Hubers, Heinz-Wilhelm

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Transient THz stimulated emission from silicon pumped by FELs by Pavlov, Sergey G., Desmann, Nils, Pohl, Andreas, van der Meer, Alexander F. G., Ortega, Jean-Michel, Prazeres, Rui, Zhukavin, Roman Kh, Abrosimov, Nikolay V., Hubers, Heinz-Wilhelm

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Terahertz pump - Terahertz probe system at Novosibirsk free electron laser: Commissioning and results of first experiments by Choporova, Yulia Yu, Gerasimov, Vasily V., Knyazev, Boris A., Sergeev, Sergey M., Shevchenko, Oleg A., Zhukavin, Roman Kh, Abrosimov, Nikolay V., Kovalevsky, Konstantin A., Ovchar, Vladimir K., Hubers, Heinz-Wilhelm, Kulipanov, Gennady N., Shastin, Valery N., Schneider, Harald, Vinokurov, Nikolay A.

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Possibility of THz donor lasing in electrically pumped silicon by Zhukavin, Roman Kh, Tsyplenkov, Veniamin V., Shastin, Valery N., Pavlov, Sergey G., Hubers, Heinz-Wilhelm

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Picosecond VIS-FIR photoconductive germanium detector by Pavlov, Sergey G., Desmann, Nils, Pohl, Andreas, Abrosimov, Nikolay V., Winnerl, Stephan, Jacob, Otto, Zhukavin, Roman Kh, Shengurov, Dmitry V., Tsyplenkov, Veniamin V., Kovalevsky, Konstantin A., Shastin, Valery N., Hubers, Hein-Wilhelm

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The ability of CW operation of THz lasing from group-V donors in silicon by Shastin, V N, Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Pavlov, S G, Hubers, H.-W

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Gain and efficiency of THz donor lasing in axially stressed silicon crystal by Shastin, V N, Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Pavlov, S G, Hubers, H.-W

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Stimulated terahertz emission due to nonlinear frequency conversion in silicon by Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Shastin, V.N., Hovenier, J.N., Redlich, B.

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Terahertz Raman laser based on silicon doped by phosphorus by Hubers, H.-W., Pavlov, S.G., Bottger, U., Zhukavin, R.Kh, Shastin, V.N., Hovenier, N., Redlich, B., Abrosimov, N., Riemann, H.

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THz lasing of shallow donors in stressed silicon crystal by Shastin, V.N., Zhukavin, R.Kh, Kovalevsky, K.A., Tsyplenkov, V.V., Pavlov, S.G., Hubers, H.-W.

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Fine tuning of THz emission line in Si lasers by Zhukavin, R.Kh, Kovalevsky, K.A., Tsyplenkov, V.V., Shastin, V.N., Pavlov, S.G., Bottger, U., Hubers, H.-W., Riemann, H., Abrosimov, N.V., Notzel, N.

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Stress dependent frequency shift in Si:Bi and Si:Sb THz lasers by Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Shastin, V N, Pavlov, S G, Böttger, U, Nötzel, N, Riemann, H, Abrosimov, N V, Hubers, H.-W

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Terahertz lasers based on nonlinear frequency conversion in silicon by Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Shastin, V.N., Hovenier, J.N., Redlich, B.

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Relaxation of upper laser levels in terahertz silicon lasers by Pavlov, S.G., Hubers, H.-W., Zhukavin, R.Kh, Phillips, P.J., Carder, D.A., Hovenier, J.N., Klaassen, T.O., Shastin, V.N.

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THz amplification based on impurity-band transitions in Si/GeSi heterostructures by Shastin, V.N., Zhukavin, R.Kh, Bekin, N.A., Tsyplenkov, V.V., Radamson, H.H., Pavlov, S.G., Hubers, H.-W.

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