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Search Results - Zhuo, V. Y.-Q.
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CMOS compatible electrode materials selection in oxide-based memory devices
by
Zhuo, V. Y.-Q.
,
Li, M.
,
Guo, Y.
,
Wang, W.
,
Yang, Y.
,
Jiang, Y.
,
Robertson, J.
Published in
Journal of applied physics
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Nano suboxide layer generated in Ta2O5 by Ar+ ion irradiation
by
Song, W. D.
,
Ying, J. F.
,
He, W.
,
Zhuo, V. Y.-Q.
,
Ji, R.
,
Xie, H. Q.
,
Ng, S. K.
,
Ng, Serene L. G.
,
Jiang, Y.
Published in
Applied physics letters
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Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
by
Zhuo, V. Y.-Q.
,
Jiang, Y.
,
Li, M. H.
,
Chua, E. K.
,
Zhang, Z.
,
Pan, J. S.
,
Zhao, R.
,
Shi, L. P.
,
Chong, T. C.
,
Robertson, J.
Published in
Applied physics letters
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Forming-Free TaOx Based RRAM Device with Low Operating Voltage and High On/Off Characteristics
by
Jiang, Y.
,
Tan, C. C.
,
Li, M. H.
,
Fang, Z.
,
Weng, B. B.
,
He, W.
,
Zhuo, V. Y.-Q.
Published in
ECS journal of solid state science and technology
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Thermal stability investigation in highly- uniform and low-voltage tantalum oxide-based RRAM
by
Zhuo, V. Y.-Q
,
Jiang, Y.
,
Robertson, J.
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Conference Proceeding
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Nano suboxide layer generated in Ta{sub 2}O{sub 5} by Ar{sup +} ion irradiation
by
Song, W. D.
,
Ying, J. F.
,
He, W.
,
Zhuo, V. Y.-Q.
,
Ji, R.
,
Xie, H. Q.
,
Ng, S. K.
,
Ng, Serene L. G.
,
Jiang, Y.
Published in
Applied physics letters
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Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation
by
Li, M. H.
,
Jiang, Y.
,
Zhuo, V. Y.-Q
,
Yeo, E.-G
,
Law, L.-T
,
Lim, K.-G
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Forming-Free TaO x Based RRAM Device with Low Operating Voltage and High On/Off Characteristics
by
Jiang, Y.
,
Tan, C. C.
,
Li, M. H.
,
Fang, Z.
,
Weng, B. B.
,
He, W.
,
Zhuo, V. Y.-Q.
Published in
ECS journal of solid state science and technology
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Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process
by
Jiang, Y.
,
Tan, C. C.
,
Yeo, E. G.
,
Li, M. H.
,
He, W.
,
Zhuo, V. Y-Q
,
Fang, Z.
,
Weng, B. B.
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