Search Results - Zhuravov, V D

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  1. 1
    Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2

    Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2 by Skrypnik, . A., Blagodarov, A. N., Kunin, V. Ya, Kochnev, I. V., Zhuravov, V. D., Bulan'kov, N. I.

    Published in Soviet Physics Journal
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  2. 2
    Metal-insulator-semiconductor light modulators utilizing the Franz-Keldysh effect in gallium arsenide

    Metal-insulator-semiconductor light modulators utilizing the Franz-Keldysh effect in gallium arsenide by Blagodarov, A. N., Zhuravov, V. D., Kochnev, I. V., Kunin, V. Ya, Morozov, S. F., Rodionov, A. V., Fomichev, V. I.

    Published in Soviet Physics Journal
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  3. 3
    Optically controlled memory element based on a metal-nitride-oxide-semiconductor structure with a gallium arsenide substrate

    Optically controlled memory element based on a metal-nitride-oxide-semiconductor structure with a gallium arsenide substrate by Bulan'kov, N I, Zhuravov, V D, Plotnikov, A F, Seleznev, V N, Tokarchuk, D N, Ferchev, G P

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