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  1. 1
    Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps

    Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps by Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio

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  2. 2
    Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

    Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps by Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio

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  3. 3
    Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

    Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy by Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo, Alessandrino, Mario S, Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio

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