Search Results - Zumuukhorol, Munkhsaikhan

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  1. 1
    Effect of a SiO₂ Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors

    Effect of a SiO₂ Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors by Zumuukhorol, Munkhsaikhan, Khurelbaatar, Zagarzusem, Kim, Jong-Hee, Shim, Kyu-Hwan, Lee, Sung-Nam, Leem, See-Jong, Choi, Chel-Jong

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  2. 2
    Enhancing the performance of surface-textured Ge Schottky photodetectors using the electroless chemical etching method

    Enhancing the performance of surface-textured Ge Schottky photodetectors using the electroless chemical etching method by Zumuukhorol, Munkhsaikhan, Boldbaatar, Sosorburam, Khurelbaatar, Zagarzusem, Baek, Ji-Yoon, Shim, Kyu-Hwan, Choi, Chel-Jong

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  3. 3
    Structural engineering of single-crystal-like perovskite nanocrystals for ultrasensitive photodetector applications

    Structural engineering of single-crystal-like perovskite nanocrystals for ultrasensitive photodetector applications by Kim, Mi Kyong, Munkhsaikhan, Zumuukhorol, Han, Se Gyo, Park, Su Min, Jin, Haedam, Cha, Jeongbeom, Yang, Seok Joo, Seo, Jungyoon, Lee, Hwa Sung, Choi, Chel-Jong, Kim, Min

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  4. 4
    Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate

    Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate by Boldbaatar, Sosorburam, Janardhanam, V., Zumuukhorol, Munkhsaikhan, Lee, Hoon-Ki, Lee, Hae-Yong, Kim, Hyo Jung, Shim, Kyu-Hwan, Choi, Chel-Jong

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  5. 5
    Application of a ZnO nanorod layer to display retarder: dependence of the optical property on synthesis conditions

    Application of a ZnO nanorod layer to display retarder: dependence of the optical property on synthesis conditions by Nguyen, Van Chuc, Kim, Jongyoon, Dang, Phuc Toan, Zumuukhorol, Munkhsaikhan, Cuong, Tran Viet, Hong, Chang-Hee, Lee, Ji-Hoon

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  6. 6
    Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes

    Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes by Zumuukhorol, Munkhsaikhan, Khurelbaatar, Zagarzusem, Yuk, Shim-Hoon, Won, Jonghan, Lee, Sung-Nam, Choi, Chel-Jong

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  7. 7
    Effect of a SiO 2 Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors

    Effect of a SiO 2 Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors by Zumuukhorol, Munkhsaikhan, Khurelbaatar, Zagarzusem, Kim, Jong-Hee, Shim, Kyu-Hwan, Lee, Sung-Nam, Leem, See-Jong, Choi, Chel-Jong

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