Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures by Besendörfer, S., Meissner, E., Zweipfennig, T., Yacoub, H., Fahle, D., Behmenburg, H., Kalisch, H., Vescan, A., Friedrich, J., Erlbacher, T.

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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks by Mauder, C, Hahn, H, Marx, M, Gao, Z, Oligschlaeger, R, Zweipfennig, T, Noculak, A, Negra, R, Kalisch, H, Vescan, A, Heuken, M

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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components by Ottaviani, A., Palacios, P., Zweipfennig, T., Alomari, M., Beckmann, C., Bierbusse, D., Wieben, J., Ehrler, J., Kalisch, H., Negra, R., Vescan, A., Burghartz, J. N.

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3D Integrated 300°C Tunable RF Oscillator exploiting AlGaN/GaN HEMT for High Temperature Applications by Palacios, P., Zweipfennig, T., Ottaviani, A., Saeed, M., Beckmann, C., Alomari, M., Lukens, G., Kalisch, H., Burghartz, J.N., Vescan, A., Negra, R.

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon by Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency by Palacios, Paula, Wei, Muh‐Dey, Zweipfennig, Thorsten, Hamed, Ahmed, Beckmann, Carsten, Kalisch, Holger, Vescan, Andrei, Negra, Renato

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MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases by Beckmann, Carsten, Wieben, Jens, Zweipfennig, Thorsten, Kirchbrücher, Arno, Ehrler, Jasmin, Stamm, Robert, Yang, Zineng, Kalisch, Holger, Vescan, Andrei

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Depletion-and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates by Beckmann, Carsten, Yang, Zineng, Wieben, Jens, Zweipfennig, Thorsten, Ehrler, Jasmin, Kirchbrucher, Arno, Kalisch, Holger, Vescan, Andrei

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Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical... by Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.

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Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapo... by Heuken, Lars, Ottaviani, Alessandro, Fahle, Dirk, Zweipfennig, Thorsten, Lükens, Gerrit, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Burghartz, Joachim N.

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Impact of AlN/Si Nucleation Layers Grown Either by NH3‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs by Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice

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Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs by Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice

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