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Search Results - Zweipfennig, T.
Search Results - Zweipfennig, T.
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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
by
Besendörfer, S.
,
Meissner, E.
,
Zweipfennig, T.
,
Yacoub, H.
,
Fahle, D.
,
Behmenburg, H.
,
Kalisch, H.
,
Vescan, A.
,
Friedrich, J.
,
Erlbacher, T.
Published in
AIP advances
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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks
by
Mauder, C
,
Hahn, H
,
Marx, M
,
Gao, Z
,
Oligschlaeger, R
,
Zweipfennig, T
,
Noculak, A
,
Negra, R
,
Kalisch, H
,
Vescan, A
,
Heuken, M
Published in
Semiconductor science and technology
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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components
by
Ottaviani, A.
,
Palacios, P.
,
Zweipfennig, T.
,
Alomari, M.
,
Beckmann, C.
,
Bierbusse, D.
,
Wieben, J.
,
Ehrler, J.
,
Kalisch, H.
,
Negra, R.
,
Vescan, A.
,
Burghartz, J. N.
Published in
IEEE transactions on electron devices
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3D Integrated 300°C Tunable RF Oscillator exploiting AlGaN/GaN HEMT for High Temperature Applications
by
Palacios, P.
,
Zweipfennig, T.
,
Ottaviani, A.
,
Saeed, M.
,
Beckmann, C.
,
Alomari, M.
,
Lukens, G.
,
Kalisch, H.
,
Burghartz, J.N.
,
Vescan, A.
,
Negra, R.
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Conference Proceeding
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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon
by
Yacoub, Hady
,
Zweipfennig, Thorsten
,
Lukens, Gerrit
,
Behmenburg, Hannes
,
Fahle, Dirk
,
Eickelkamp, Martin
,
Heuken, Michael
,
Kalisch, Holger
,
Vescan, Andrei
Published in
IEEE transactions on electron devices
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AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
by
Palacios, Paula
,
Wei, Muh‐Dey
,
Zweipfennig, Thorsten
,
Hamed, Ahmed
,
Beckmann, Carsten
,
Kalisch, Holger
,
Vescan, Andrei
,
Negra, Renato
Published in
Electronics letters
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MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases
by
Beckmann, Carsten
,
Wieben, Jens
,
Zweipfennig, Thorsten
,
Kirchbrücher, Arno
,
Ehrler, Jasmin
,
Stamm, Robert
,
Yang, Zineng
,
Kalisch, Holger
,
Vescan, Andrei
Published in
Journal of physics. D, Applied physics
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Depletion-and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates
by
Beckmann, Carsten
,
Yang, Zineng
,
Wieben, Jens
,
Zweipfennig, Thorsten
,
Ehrler, Jasmin
,
Kirchbrucher, Arno
,
Kalisch, Holger
,
Vescan, Andrei
Published in
IEEE journal of the Electron Devices Society
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Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical...
by
Heuken, Lars
,
Ottaviani, Alessandro
,
Fahle, Dirk
,
Zweipfennig, Thorsten
,
Lükens, Gerrit
,
Kalisch, Holger
,
Vescan, Andrei
,
Heuken, Michael
,
Burghartz, Joachim N.
Published in
Physica status solidi. A, Applications and materials science
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Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapo...
by
Heuken, Lars
,
Ottaviani, Alessandro
,
Fahle, Dirk
,
Zweipfennig, Thorsten
,
Lükens, Gerrit
,
Kalisch, Holger
,
Vescan, Andrei
,
Heuken, Michael
,
Burghartz, Joachim N.
Published in
Physica status solidi. A, Applications and materials science
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Impact of AlN/Si Nucleation Layers Grown Either by NH3‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs
by
Yacoub, Hady
,
Zweipfennig, Thorsten
,
Kalisch, Holger
,
Vescan, Andrei
,
Dadgar, Armin
,
Wieneke, Matthias
,
Bläsing, Jürgen
,
Strittmatter, A.
,
Rennesson, Stephanie
,
Semond, Fabrice
Published in
Physica status solidi. A, Applications and materials science
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Impact of AlN/Si Nucleation Layers Grown Either by NH 3 ‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs
by
Yacoub, Hady
,
Zweipfennig, Thorsten
,
Kalisch, Holger
,
Vescan, Andrei
,
Dadgar, Armin
,
Wieneke, Matthias
,
Bläsing, Jürgen
,
Strittmatter, A.
,
Rennesson, Stephanie
,
Semond, Fabrice
Published in
Physica status solidi. A, Applications and materials science
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