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An empirical I-V nonlinear model suitable for GaN FET class F PA design
by
García-Osorio, A.
,
Loo-Yau, J. R.
,
Reynoso-Hernández, J. A.
,
Ortega-C., Susana
,
del Valle-Padilla, J. L.
Published in
Microwave and optical technology letters
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Microwave And Optical Technology Letters
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Chalmers Model
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Class F Pa
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Electric Potential
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Engineering
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Engineering, Electrical & Electronic
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Exact Solutions
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Gallium Nitrides
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Gan Fet
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Microwaves
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Nonlinear Model
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Nonlinearity
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Optics
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Physical Sciences
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Reproduction
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Volt-Ampere Characteristics
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