Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy by de Castro, M.P.P., von Zuben, A.A., Frateschi, N.C., Santo, L.L.E., Galvão, D.S., Bettini, J., de Carvalho, M.M.G.

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InGaAs/GaAs/InGaP quantum well laser with etched mirrors obtained by electron cyclotron resonance plasma by Mestanza, S.N.M., Von Zuben, A.A., Frateschi, N.C., Bettini, J., de Carvalho, M.M.G.

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