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Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design
The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1μm-scale pocket-implant technology is gate-length (Lg) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for n- and p-MOSFE...
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creator | Hisamitsu, K. Ueno, H. Tanaka, M. Kitamaru, D. Miura-Mattausch, M. Mattausch, H. J. Kumashiro, S. Yamaguchi, T. Yamashita, K. Nakayama, N. |
description | The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1μm-scale pocket-implant technology is gate-length (Lg) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for n- and p-MOSFET. The circuit TIP is close to the n-MOSFET TIP for long Lg and gets closer to the p-MOSFET TIP for short Lg. The reason is the different temperature dependence of electron and hole mobility as a function of Lg. Due to the high field effect, oscillation periods of ring-oscillators with short Lg hardly improve, when the supply voltage is raised beyond the TIP. Therefore, an advantageous supply-voltage (VDD) choice for pocket-implant technologies is near the TIP of circuits, allowing a favorable combination of short switching delay and minimized temperature dependence. By designing the Vth,p closer to Vth,n, not only the low power dissipation, due to the reduction of the TIP, but also the suppressed TIP fluctuation can be realized. |
doi_str_mv | 10.1145/1119772.1119807 |
format | conference_proceeding |
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J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.</creator><creatorcontrib>Hisamitsu, K. ; Ueno, H. ; Tanaka, M. ; Kitamaru, D. ; Miura-Mattausch, M. ; Mattausch, H. J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.</creatorcontrib><description>The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1μm-scale pocket-implant technology is gate-length (Lg) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for n- and p-MOSFET. The circuit TIP is close to the n-MOSFET TIP for long Lg and gets closer to the p-MOSFET TIP for short Lg. The reason is the different temperature dependence of electron and hole mobility as a function of Lg. Due to the high field effect, oscillation periods of ring-oscillators with short Lg hardly improve, when the supply voltage is raised beyond the TIP. Therefore, an advantageous supply-voltage (VDD) choice for pocket-implant technologies is near the TIP of circuits, allowing a favorable combination of short switching delay and minimized temperature dependence. By designing the Vth,p closer to Vth,n, not only the low power dissipation, due to the reduction of the TIP, but also the suppressed TIP fluctuation can be realized.</description><identifier>ISBN: 0780376609</identifier><identifier>ISBN: 9780780376601</identifier><identifier>DOI: 10.1145/1119772.1119807</identifier><language>eng</language><publisher>New York, NY, USA: ACM</publisher><subject>Hardware ; Hardware -- Hardware validation ; Hardware -- Integrated circuits ; Hardware -- Very large scale integration design ; Networks ; Networks -- Network types ; Networks -- Network types -- Ad hoc networks ; Networks -- Network types -- Ad hoc networks -- Mobile ad hoc networks</subject><ispartof>Proceedings of the 2003 Asia and South Pacific Design Automation Conference, 2003, p.179-183</ispartof><rights>2003 ACM</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,27925</link.rule.ids></links><search><creatorcontrib>Hisamitsu, K.</creatorcontrib><creatorcontrib>Ueno, H.</creatorcontrib><creatorcontrib>Tanaka, M.</creatorcontrib><creatorcontrib>Kitamaru, D.</creatorcontrib><creatorcontrib>Miura-Mattausch, M.</creatorcontrib><creatorcontrib>Mattausch, H. J.</creatorcontrib><creatorcontrib>Kumashiro, S.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><creatorcontrib>Yamashita, K.</creatorcontrib><creatorcontrib>Nakayama, N.</creatorcontrib><title>Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design</title><title>Proceedings of the 2003 Asia and South Pacific Design Automation Conference</title><description>The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1μm-scale pocket-implant technology is gate-length (Lg) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for n- and p-MOSFET. The circuit TIP is close to the n-MOSFET TIP for long Lg and gets closer to the p-MOSFET TIP for short Lg. The reason is the different temperature dependence of electron and hole mobility as a function of Lg. Due to the high field effect, oscillation periods of ring-oscillators with short Lg hardly improve, when the supply voltage is raised beyond the TIP. Therefore, an advantageous supply-voltage (VDD) choice for pocket-implant technologies is near the TIP of circuits, allowing a favorable combination of short switching delay and minimized temperature dependence. By designing the Vth,p closer to Vth,n, not only the low power dissipation, due to the reduction of the TIP, but also the suppressed TIP fluctuation can be realized.</description><subject>Hardware</subject><subject>Hardware -- Hardware validation</subject><subject>Hardware -- Integrated circuits</subject><subject>Hardware -- Very large scale integration design</subject><subject>Networks</subject><subject>Networks -- Network types</subject><subject>Networks -- Network types -- Ad hoc networks</subject><subject>Networks -- Network types -- Ad hoc networks -- Mobile ad hoc networks</subject><isbn>0780376609</isbn><isbn>9780780376601</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid/><recordid>eNqNkE1OwzAQhS0hJKB0zdZLNi527cTJElX8SZXYlHXkjMetaRJHsSsuxxk4E47oAZjFvMX7Zp70CLkTfCWEKh6EELXW69WsFdcX5Ibriktdlry-IssYP3keWStRyGvytcN-xMmk04TMDxZHzGsAZGPwQ6LjFLKdPEbqwkRzxs93zyKYDukY4IiJ-X7sTEYTwmEIXdjPsBksTQek2TSQaBgo-AlOPlGL0e-HW3LpTBdxedYF-Xh-2m1e2fb95W3zuGVGFDoxZ9dcKuV4y0uQCgC0FEqvrTGFcNrZwlgOFkC0lQRX1KqqFa-xKJ1RNp8syP3fXwN904ZwjI3gzVxUcy6qOReV0dU_0aadPDr5Cy4xbU4</recordid><startdate>20030121</startdate><enddate>20030121</enddate><creator>Hisamitsu, K.</creator><creator>Ueno, H.</creator><creator>Tanaka, M.</creator><creator>Kitamaru, D.</creator><creator>Miura-Mattausch, M.</creator><creator>Mattausch, H. J.</creator><creator>Kumashiro, S.</creator><creator>Yamaguchi, T.</creator><creator>Yamashita, K.</creator><creator>Nakayama, N.</creator><general>ACM</general><scope/></search><sort><creationdate>20030121</creationdate><title>Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design</title><author>Hisamitsu, K. ; Ueno, H. ; Tanaka, M. ; Kitamaru, D. ; Miura-Mattausch, M. ; Mattausch, H. J. ; Kumashiro, S. ; Yamaguchi, T. ; Yamashita, K. ; Nakayama, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a157t-fd20344f0b06c34ccc731472daa51f7fd5ad0cdcc1b83cf59489409e56fa4d6c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Hardware</topic><topic>Hardware -- Hardware validation</topic><topic>Hardware -- Integrated circuits</topic><topic>Hardware -- Very large scale integration design</topic><topic>Networks</topic><topic>Networks -- Network types</topic><topic>Networks -- Network types -- Ad hoc networks</topic><topic>Networks -- Network types -- Ad hoc networks -- Mobile ad hoc networks</topic><toplevel>online_resources</toplevel><creatorcontrib>Hisamitsu, K.</creatorcontrib><creatorcontrib>Ueno, H.</creatorcontrib><creatorcontrib>Tanaka, M.</creatorcontrib><creatorcontrib>Kitamaru, D.</creatorcontrib><creatorcontrib>Miura-Mattausch, M.</creatorcontrib><creatorcontrib>Mattausch, H. J.</creatorcontrib><creatorcontrib>Kumashiro, S.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><creatorcontrib>Yamashita, K.</creatorcontrib><creatorcontrib>Nakayama, N.</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hisamitsu, K.</au><au>Ueno, H.</au><au>Tanaka, M.</au><au>Kitamaru, D.</au><au>Miura-Mattausch, M.</au><au>Mattausch, H. J.</au><au>Kumashiro, S.</au><au>Yamaguchi, T.</au><au>Yamashita, K.</au><au>Nakayama, N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design</atitle><btitle>Proceedings of the 2003 Asia and South Pacific Design Automation Conference</btitle><date>2003-01-21</date><risdate>2003</risdate><spage>179</spage><epage>183</epage><pages>179-183</pages><isbn>0780376609</isbn><isbn>9780780376601</isbn><abstract>The temperature-independence point (TIP) of the drain current for MOS transistors in a 0.1μm-scale pocket-implant technology is gate-length (Lg) dependent and has different magnitudes for n-MOSFET and p-MOSFET. Circuits such as ring-oscillators have a TIP, lying between the values for n- and p-MOSFET. The circuit TIP is close to the n-MOSFET TIP for long Lg and gets closer to the p-MOSFET TIP for short Lg. The reason is the different temperature dependence of electron and hole mobility as a function of Lg. Due to the high field effect, oscillation periods of ring-oscillators with short Lg hardly improve, when the supply voltage is raised beyond the TIP. Therefore, an advantageous supply-voltage (VDD) choice for pocket-implant technologies is near the TIP of circuits, allowing a favorable combination of short switching delay and minimized temperature dependence. By designing the Vth,p closer to Vth,n, not only the low power dissipation, due to the reduction of the TIP, but also the suppressed TIP fluctuation can be realized.</abstract><cop>New York, NY, USA</cop><pub>ACM</pub><doi>10.1145/1119772.1119807</doi><tpages>5</tpages></addata></record> |
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identifier | ISBN: 0780376609 |
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language | eng |
recordid | cdi_acm_books_10_1145_1119772_1119807 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Hardware Hardware -- Hardware validation Hardware -- Integrated circuits Hardware -- Very large scale integration design Networks Networks -- Network types Networks -- Network types -- Ad hoc networks Networks -- Network types -- Ad hoc networks -- Mobile ad hoc networks |
title | Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design |
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