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Simulation of STM Images of Hematite α‑Fe2O3(0001) Surfaces: Dependence on Distance and Bias

Experimental scanning tunneling microscopy (STM) images of the hematite (0001) surface exhibit long-range superstructures formed by coexisting domains consisting of different terminations (α, β, γ) of the α-Fe2O3(0001) surface. In this work extensive simulations of STM images of different terminatio...

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Published in:Journal of physical chemistry. C 2021-12, Vol.125 (48), p.26711-26717
Main Authors: Ossowski, Tomasz, Pabisiak, Tomasz, Kiejna, Adam, Palotás, Krisztián, Bauer, Ernst
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container_issue 48
container_start_page 26711
container_title Journal of physical chemistry. C
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creator Ossowski, Tomasz
Pabisiak, Tomasz
Kiejna, Adam
Palotás, Krisztián
Bauer, Ernst
description Experimental scanning tunneling microscopy (STM) images of the hematite (0001) surface exhibit long-range superstructures formed by coexisting domains consisting of different terminations (α, β, γ) of the α-Fe2O3(0001) surface. In this work extensive simulations of STM images of different terminations of hematite (0001) surfaces are performed and compared with measured ones in order to identify the nature of the superstructure unit meshes. Based on DFT calculations of α-Fe2O3(0001) surfaces, the STM images are simulated using Chen’s derivative rules approach. Different bias voltages and tip–sample distances as well as the role of the tip type are considered and discussed. For some terminations an extreme dependence of the simulated image on the distance and bias voltage is found. The difference between simulations of metal and insulator/semiconductor surfaces is discussed. The condition of simultaneous agreement between simulation and experiment for all terminations within a narrow STM parameter range leads to the assignment of the α, β and γ terminations to the ferryl, Fe-Fe–O3– or Fe–O3–Fe–, and O3–Fe–Fe– terminations, respectively.
doi_str_mv 10.1021/acs.jpcc.1c06656
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title Simulation of STM Images of Hematite α‑Fe2O3(0001) Surfaces: Dependence on Distance and Bias
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