MAPbI3 on GaAs: A Washable Heterointerface with Robust Passivation Effect

We demonstrate that the deposition of methylammonium lead iodide (MAPbI3) on native nominally undoped (100) GaAs substrates generates an enhancement in the GaAs photoluminescence (PL) intensity by more than 3 orders of magnitude. We attribute this pronounced PL enhancement to some very efficient MAP...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2024-01, Vol.128 (2), p.867-876
Main Authors: Manidakis, E. G., Tsikritzis, D., Chatzarakis, N. G., Androulidaki, M., Tsagaraki, K., Pavlopoulou, E., Stoumpos, C. C., Pelekanos, N. T.
Format: Article
Language:English
Subjects:
C: Physical Properties of Materials and Interfaces
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Summary:We demonstrate that the deposition of methylammonium lead iodide (MAPbI3) on native nominally undoped (100) GaAs substrates generates an enhancement in the GaAs photoluminescence (PL) intensity by more than 3 orders of magnitude. We attribute this pronounced PL enhancement to some very efficient MAPbI3-induced passivation schemes of the GaAs surface. Time-resolved PL experiments reveal greatly enhanced carrier lifetimes next to the GaAs surface, in agreement with a passivation process. X-ray photoelectron spectroscopy measurements on ultrathin MAPbI3/GaAs and PbI2/GaAs samples suggest some Pb-related deoxygenation of the GaAs surface, as an atomistic mechanism possibly related to the passivation effect. Notably, the whole process is fully reversible, as it suffices to immerse the MAPbI3/GaAs sample in salt water and the MAPbI3 layer is completely removed, while the PL intensity and spectral features of the GaAs substrate return to their pristine condition.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.3c05799