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Electron Transport in Soft-Crystalline Thin Films of Perylene Diimide Substituted with Swallow-Tail Terminal Alkyl Chains

We have examined the structural and electron transport properties of a swallow-tailed N,N’-bis­(1-heptyloctyl)-perylene-3,4:9,10-bis­(dicarboximide) (PDI-C8,7) in thin films. A comprehensive analysis of material with the use of X-ray scattering methods evidenced the appearance of a new soft-crystall...

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Published in:Journal of physical chemistry. C 2024-12, Vol.128 (51), p.21826-21835
Main Authors: Ślęczkowski, Piotr, Xiao, Yiming, Wu, Jeong Weon, Adachi, Chihaya, Vargas, Lydia Sosa, Kreher, David, Heinrich, Benoît, Ribierre, Jean-Charles, Mathevet, Fabrice
Format: Article
Language:English
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Summary:We have examined the structural and electron transport properties of a swallow-tailed N,N’-bis­(1-heptyloctyl)-perylene-3,4:9,10-bis­(dicarboximide) (PDI-C8,7) in thin films. A comprehensive analysis of material with the use of X-ray scattering methods evidenced the appearance of a new soft-crystalline mesophase that was induced by thermal processing of the swallow-tail PDI derivative. By combining electrical measurements with grazing-incidence wide-angle X-ray scattering (GIWAXS), we show that these morphological changes of thin films boost their charge transport in the organic field-effect transistor (OFET) configuration. The systematic device engineering of OFETs, including device architecture, thermal history, and preparation method of the active layer, resulted in a significant improvement in the electron field-effect mobility and the related performance parameters. In particular, the results demonstrate a strong improvement in the charge transport of PDI-C8,7 films in their soft-crystalline phase, which originates from the N-substitution by swallow-tails. In addition, our study demonstrates that the melt-processing route, a solvent-free and vacuum-free method for the fabrication of organic thin films, represents an efficient strategy for the fabrication of high-performance air-stable n-type OFETs.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.4c06222