Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

• Published in: ACS applied electronic materials 2021-11, Vol.3 (11), p.5059-5065
• Main Authors: Yin, Siqi, Sun, Jiacheng, Sun, Yiming, Qiao, Leilei, Zhu, Wenxuan, Pan, Feng, Zhang, Xiaozhong, Song, Cheng
• Format: Article
• Language: English
• ISSN: 2637-6113; 2637-6113
• DOI: 10.1021/acsaelm.1c00808

A basic logic gate based on conventional silicon transistors needs the combination of at least two transistors in series or parallel. Two-dimensional (2D) materials with atomic thickness and flexible band gaps are inherently superior for constructing new types of logic devices, hence one can expect abundant logic gates be realized in a single 2D logic device. However, the types of logic gates implemented in a single 2D device remain limited to two or three kinds, this kind of device usually shows a complex structure which needs at least two polarity gates, and a control voltage has to be added all the time at polarity gates. Here, we take advantage of the characteristic of 2D materials being sensitive to surface charge doping and achieve five kinds of basic logic operations in a single 2D WSe2 transistor by carrier doping. Our WSe2 transistor can innately realize the XNOR operations and switch to AND/OR operations by electron doping and to NAND/NOR operations by hole doping. These findings present a promising application of 2D materials in larger-scale integration circuits with high intensities and multiple functions.