Achieving Entire Seven Fundamental Boolean Logic Operations in a Two-Terminal Li-Based Memristor

• Published in: ACS applied electronic materials 2024-12, Vol.6 (12), p.9194-9202
• Main Authors: Feng, Wenshuai, Hu, Jiacheng, Yin, Menghan, Shao, Peipei, Huang, Qingjiao, Wen, Rui-Tao
• Format: Article
• Language: English
• ISSN: 2637-6113; 2637-6113
• DOI: 10.1021/acsaelm.4c01827

Conventional logic operations transmitting data between processing and the memory unit inevitably result in a “memory wall” and energy consumption dilemmas. The memristor provides an alternative solution at the device level by integrating logic operations and memory functions, however, a combination of multistage operations in memristors is required to achieve fundamental Boolean logic calculations, especially for XOR/XNOR. In this work, we implement the XOR/XNOR through leveraging bifunctional oxygen-containing Ti thin films as both current collectors and Li-reservoirs in a two-terminal Li-based memristor, i.e., ITO/Nb2O5/LiCoO2/Ti. When Li-ions are inserted into oxygen-containing Ti under reversed voltage and partially reduce the high-valence Ti, the subsequent postsynaptic current exceeds the threshold, thereby realizing the XOR/XNOR logic operations. Therefore, the entire seven fundamental Boolean logic operations can be achieved in an individual device, featuring biological-like synaptic plasticity without redundant circuit design. Through electrochemical modulation of pulse parameters, the artificial synapse demonstrates versatile types of short-term potentiation, encompassing pair-pulse facilitation, spike-voltage-dependent plasticity, and spike-rate-dependent-plasticity (SRDP). The SRDP displays properties analogous to a high-pass filter as discernible distinction of current response within and beyond the frequency of 1 Hz. Furthermore, the Physiological functions of Ebbinghaus’ memory curves and Pavlov’s classical conditioning experiment are emulated on this single memristor based on the principles of long-term potentiation.