P‑Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low Temperatures

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transis...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2013-10, Vol.5 (19), p.9615-9619
Main Authors: Al-Jawhari, Hala A, Caraveo-Frescas, Jesus A, Hedhili, M. N, Alshareef, H. N
Format: Article
Language:English
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Summary:P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 °C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V–1 s–1, 1.5×102, and −5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed.
ISSN:1944-8244
1944-8252
DOI:10.1021/am402542j