Interface-Engineered Resistive Switching: CeO2 Nanocubes as High-Performance Memory Cells

We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, bette...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2013-10, Vol.5 (19), p.9429-9434
Main Authors: Younis, Adnan, Chu, Dewei, Mihail, Ionsecu, Li, Sean
Format: Article
Language:English
Online Access:Get full text
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Summary:We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 104, better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
ISSN:1944-8244
1944-8252
DOI:10.1021/am403243g