Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films

The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecu...

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Bibliographic Details
Published in:Crystal growth & design 2015-01, Vol.15 (1), p.390-394
Main Authors: Kampmeier, Jörn, Borisova, Svetlana, Plucinski, Lukasz, Luysberg, Martina, Mussler, Gregor, Grützmacher, Detlev
Format: Article
Language:English
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Summary:The structural perfection of the topological insulator (TI) Bi2Te3 is a key issue for its employment in future device applications. State of the art TIs, featuring exotic electronic properties, predominantly suffer from structural defects such as twin domains. A suppression of such domains in molecular beam epitaxy-grown Bi2Te3 thin films on Si(111) substratesmeasured by X-ray diffraction pole figure scansis presented in this paper. A numerical analysis of van der Waals potentials was performed, revealing the nucleation collinear with the Si(311) reflections of the Si(111) substrate to be energetically preferred.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg501471z