Electrodeposition of Bi1 - x Sb x Films and 200-nm Wire Arrays from a Nonaqueous Solvent

• Published in: Chemistry of materials 2003-04, Vol.15 (8), p.1676-1681
• Main Authors: Martín-González, Marisol, Prieto, Amy L, Knox, Meredith S, Gronsky, Ronald, Sands, Timothy, Stacy, Angelica M
• Format: Article
• Language: English
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/cm021027f

Films and 200-nm wire arrays of Bi1- x Sb x alloys, one of the best known low-temperature thermoelectric materials, have been obtained by electrodeposition without the need for complexing the Sb cations in solution or further thermal treatment after deposition. The process consists of reduction of Bi1- x Sb x directly from a solution of Bi(NO3)3· 5H2O and SbCl3 in dimethyl sulfoxide at 25 °C on Pt electrodes. The electrodeposited films are polycrystalline and single phase under slow growth conditions, but two phases are observed under rapid growth conditions (more negative potentials) and for films with roughly equal amounts of Bi and Sb. 200-nm wire arrays of Bi1- x Sb x were grown under similar conditions using porous alumina as a template. Arrays of dense, continuous, and highly crystalline Bi0.84Sb0.16 wires (close to the predicted optimum composition for thermoelectric applications) have been fabricated successfully at deposition potentials of −0.28 V vs Ag/AgCl from a solution of 0.050 M Bi and 0.030 M Sb in DMSO.