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Deposition of photocatalytic TiO2 and N-doped TiO2 films by arc ion plating

TiO2 and N-doped TiO2 films were deposited on the glass substrates by arc ion plating method. The results show that the deposition rate does not change with the increasing deposition time. The increase of mass flow rate of N2 gives rise to the increase of deposition rate. All as-deposited TiO2 and N...

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Published in:Transactions of Nonferrous Metals Society of China 2007-11, Vol.17 (A02), p.827-830
Main Author: 李明升 张淑娟 娄瑾 刘庭芝 周泽华 杨干兰 胡长员 李文魁
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description TiO2 and N-doped TiO2 films were deposited on the glass substrates by arc ion plating method. The results show that the deposition rate does not change with the increasing deposition time. The increase of mass flow rate of N2 gives rise to the increase of deposition rate. All as-deposited TiO2 and N-doped TiO2 films are amorphous. The anatase TiO2 phase with preferred orientation (101) is acquired by post-annealing at 400 ℃ for 2 h. The incorporation of N into the TiO2 films and the heat treatment extensively shift the band edge to the visible light region.
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subjects 二氧化钛薄膜
光催化性能
氮掺杂
电弧离子电镀法
title Deposition of photocatalytic TiO2 and N-doped TiO2 films by arc ion plating
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