Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

• Published in: Chinese physics C 2008-09, Vol.32 (9), p.769-772
• Main Author: 邓居智 陈荣 SEKIGUCHI Tetsuhiro BABA Yuji HIRAO Norie HONDA Mitsunori
• Format: Article
• Language: English
• Subjects: 同步加速器辐射; 核物理学; 硅酞菁染料二氯化合物薄膜
• ISSN: 1674-1137; 0254-3052; 2058-6132
• DOI: 10.1088/1674-1137/32/9/018

Thin silicon phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser. The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure （NEXAFS）. In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to Is → σ^＊Si-N and 1s→ σ^＊Si-Cl appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.