Improved optical performance of GaN grown on pattered sapphire substrate

An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate （PSS） by metalorganic chemical vapor deposition （MOCVD）. The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties o...

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Bibliographic Details
Published in:Journal of semiconductors 2009, Vol.30 (1), p.7-10
Main Author: 姚光锐 范广涵 李述体 章勇 周天民
Format: Article
Language:English
Subjects:
光激发光
光致发光
有机化学
气相沉积
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Summary:An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate （PSS） by metalorganic chemical vapor deposition （MOCVD）. The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties of the GaN film have been investigated by double crystal X-ray diffraction （DCXRD）, atomic force microscopy （AFM） and photoluminescence （PL）, respectively. The full-width at half-maximum （FWHM） of the X-ray diffraction curves （XRCs） for the GaN film grown on PSS in the （0002） plane and the （1012） plane are as low as 312.80 arcsec and 298.08 acrsec, respectively. The root mean square （RMS） of the GaN film grown on PSS is 0.233 nm and the intensity of the PL peak is comparatively strong.
ISSN:1674-4926
DOI:10.1088/1674-4976/30/1/013001