Wet etching and infrared absorption of AlN bulk single crystals

The defects and the lattice perfection of an AlN（0001） single crystal grown by the physical vapor trans-port（PVT） method were investigated by wet etching, X-ray diffraction（XRD）, and infrared absorption, respectively.A regular hexagonal etch pit density（EPD） of about 4000 cm-2 is observed on the（000...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2009-07, Vol.30 (7), p.29-32
Main Author: 李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红
Format: Article
Language:English
Subjects:
X射线衍射
散装
晶体生长
氮化铝
红外吸收
纤锌矿结构
蚀刻
铝单晶
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3
cites cdi_FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3
container_end_page 32
container_issue 7
container_start_page 29
container_title Journal of semiconductors
container_volume 30
creator 李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红
description The defects and the lattice perfection of an AlN（0001） single crystal grown by the physical vapor trans-port（PVT） method were investigated by wet etching, X-ray diffraction（XRD）, and infrared absorption, respectively.A regular hexagonal etch pit density（EPD） of about 4000 cm-2 is observed on the（0001） Al surface of an AlN single crystal.The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process.The XRD full width at half maximum（FWHM） of the single crystal is 35 arcsec, suggesting a good lattice perfection.Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively.These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.
doi_str_mv 10.1088/1674-4926/30/7/073002
format article
fullrecord <record><control><sourceid>iop_chong</sourceid><recordid>TN_cdi_chongqing_backfile_31059756</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>31059756</cqvip_id><sourcerecordid>10_1088_1674_4926_30_7_073002</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3</originalsourceid><addsrcrecordid>eNqNkEtPwzAQhH0Aiar0JyBZnAlZx66dnFBV8ZIquIA4Wn62VkMS7HDov8dREaceOM1oNd9qZxG6InBLoK5LwgUrWFPxkkIpShAUoDpDs7_5BVqkFDRAU9eUAczQ3YcbsRvNLnRbrDqLQ-ejis5ipVMfhzH0He49XrUvWH-3e5xysHXYxEMaVZsu0bnP4ha_OkfvD_dv66di8_r4vF5tCkMrqAqhnFCiYpQ1vHbNZDg1TlPqrDLWu0bni6hggmiXLePC2YoAUVwpbxWdo-Vxr4l9StF5OcTwqeJBEpBTeTmVlFNJSUEKeSyfOThyoR_-jdycQE5F5WB9jl__Xrbru-1Xfo_Uyux9aJ2kBJaNWHL6AyYSdZM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Wet etching and infrared absorption of AlN bulk single crystals</title><source>Institute of Physics</source><creator>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</creator><creatorcontrib>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</creatorcontrib><description>The defects and the lattice perfection of an AlN（0001） single crystal grown by the physical vapor trans-port（PVT） method were investigated by wet etching, X-ray diffraction（XRD）, and infrared absorption, respectively.A regular hexagonal etch pit density（EPD） of about 4000 cm-2 is observed on the（0001） Al surface of an AlN single crystal.The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process.The XRD full width at half maximum（FWHM） of the single crystal is 35 arcsec, suggesting a good lattice perfection.Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively.These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/30/7/073002</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>X射线衍射 ; 散装 ; 晶体生长 ; 氮化铝 ; 红外吸收 ; 纤锌矿结构 ; 蚀刻 ; 铝单晶</subject><ispartof>Journal of semiconductors, 2009-07, Vol.30 (7), p.29-32</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3</citedby><cites>FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</creatorcontrib><title>Wet etching and infrared absorption of AlN bulk single crystals</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>The defects and the lattice perfection of an AlN（0001） single crystal grown by the physical vapor trans-port（PVT） method were investigated by wet etching, X-ray diffraction（XRD）, and infrared absorption, respectively.A regular hexagonal etch pit density（EPD） of about 4000 cm-2 is observed on the（0001） Al surface of an AlN single crystal.The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process.The XRD full width at half maximum（FWHM） of the single crystal is 35 arcsec, suggesting a good lattice perfection.Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively.These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.</description><subject>X射线衍射</subject><subject>散装</subject><subject>晶体生长</subject><subject>氮化铝</subject><subject>红外吸收</subject><subject>纤锌矿结构</subject><subject>蚀刻</subject><subject>铝单晶</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNkEtPwzAQhH0Aiar0JyBZnAlZx66dnFBV8ZIquIA4Wn62VkMS7HDov8dREaceOM1oNd9qZxG6InBLoK5LwgUrWFPxkkIpShAUoDpDs7_5BVqkFDRAU9eUAczQ3YcbsRvNLnRbrDqLQ-ejis5ipVMfhzH0He49XrUvWH-3e5xysHXYxEMaVZsu0bnP4ha_OkfvD_dv66di8_r4vF5tCkMrqAqhnFCiYpQ1vHbNZDg1TlPqrDLWu0bni6hggmiXLePC2YoAUVwpbxWdo-Vxr4l9StF5OcTwqeJBEpBTeTmVlFNJSUEKeSyfOThyoR_-jdycQE5F5WB9jl__Xrbru-1Xfo_Uyux9aJ2kBJaNWHL6AyYSdZM</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</creator><general>IOP Publishing</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090701</creationdate><title>Wet etching and infrared absorption of AlN bulk single crystals</title><author>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>X射线衍射</topic><topic>散装</topic><topic>晶体生长</topic><topic>氮化铝</topic><topic>红外吸收</topic><topic>纤锌矿结构</topic><topic>蚀刻</topic><topic>铝单晶</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>李巍巍 赵有文 董志远 杨俊 胡炜杰 客建红</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wet etching and infrared absorption of AlN bulk single crystals</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2009-07-01</date><risdate>2009</risdate><volume>30</volume><issue>7</issue><spage>29</spage><epage>32</epage><pages>29-32</pages><issn>1674-4926</issn><abstract>The defects and the lattice perfection of an AlN（0001） single crystal grown by the physical vapor trans-port（PVT） method were investigated by wet etching, X-ray diffraction（XRD）, and infrared absorption, respectively.A regular hexagonal etch pit density（EPD） of about 4000 cm-2 is observed on the（0001） Al surface of an AlN single crystal.The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process.The XRD full width at half maximum（FWHM） of the single crystal is 35 arcsec, suggesting a good lattice perfection.Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively.These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-4926/30/7/073002</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1674-4926
ispartof Journal of semiconductors, 2009-07, Vol.30 (7), p.29-32
issn 1674-4926
language eng
recordid cdi_chongqing_backfile_31059756
source Institute of Physics
subjects X射线衍射
散装
晶体生长
氮化铝
红外吸收
纤锌矿结构
蚀刻
铝单晶
title Wet etching and infrared absorption of AlN bulk single crystals
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A50%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_chong&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Wet%20etching%20and%20infrared%20absorption%20of%20AlN%20bulk%20single%20crystals&rft.jtitle=Journal%20of%20semiconductors&rft.au=%E6%9D%8E%E5%B7%8D%E5%B7%8D%20%E8%B5%B5%E6%9C%89%E6%96%87%20%E8%91%A3%E5%BF%97%E8%BF%9C%20%E6%9D%A8%E4%BF%8A%20%E8%83%A1%E7%82%9C%E6%9D%B0%20%E5%AE%A2%E5%BB%BA%E7%BA%A2&rft.date=2009-07-01&rft.volume=30&rft.issue=7&rft.spage=29&rft.epage=32&rft.pages=29-32&rft.issn=1674-4926&rft_id=info:doi/10.1088/1674-4926/30/7/073002&rft_dat=%3Ciop_chong%3E10_1088_1674_4926_30_7_073002%3C/iop_chong%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3202-7ae7a72434968e9243463ceb33edacdfe9b88337471beb88467ed2101a6aafda3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=31059756&rfr_iscdi=true