Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for th...

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Bibliographic Details
Published in:Chinese physics letters 2009-12, Vol.26 (12), p.202-205
Main Author: 王文杰 邓加军 付星球 胡冰 丁琨
Format: Article
Language:English
Subjects:
光致发光
压力效应
压力系数
压力范围
异常压力
排放量
氮行为
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Summary:Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.
ISSN:0256-307X
1741-3540