Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents

The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline （BPhen） doped 8-hydroxyquinolinatolithium （Liq） at various thicknesses （50-300 nm） have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its...

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Bibliographic Details
Published in:Journal of semiconductors 2009-11, Vol.30 (11), p.63-66
Main Author: 希扎尔·乌尔·哈克 鲁富翰 蒋雪茵 张志林 张小文 张良 李俊
Format: Article
Language:English
Subjects:
n掺杂
二苯基
估计
流动
电子迁移率
电流测量
空间电荷限制电流
菲
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Summary:The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline （BPhen） doped 8-hydroxyquinolinatolithium （Liq） at various thicknesses （50-300 nm） have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/（V.s） （at 0.3 MV/cm） with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen （3.4 × 10^-4 cm^2/（V.s）） measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.
ISSN:1674-4926
DOI:10.1088/1674-4926/30/11/114009