Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapordeposition

This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/cha...

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Bibliographic Details
Published in:Chinese physics B 2010 (2), p.411-417
Main Author: 卢国军 朱建军 江德生 王玉田 赵德刚 刘宗顺 张书明 杨辉
Format: Article
Language:English
Subjects:
光学性能
化学气相沉积
卢瑟福背散射/沟道
外延层
层结构
有机金属化学
氮化镓
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Summary:This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%--20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5~eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.
ISSN:1674-1056
2058-3834