An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering

An MWCNT-doped （multi-walled carbon nanotube） Sn02 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning elect...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2010-02, Vol.31 (2), p.23-28
Main Author: 林伟 黄世震 陈文哲
Format: Article
Language:English
Subjects:
X射线光电子能谱
二氧化氮
二氧化锡薄膜
多壁碳纳米管
扫描电子显微镜
掺杂
气体传感器
磁控反应溅射
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 28
container_issue 2
container_start_page 23
container_title Journal of semiconductors
container_volume 31
creator 林伟 黄世震 陈文哲
description An MWCNT-doped （multi-walled carbon nanotube） Sn02 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy （SEM） characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs （p-type） and SnO2 （n-type） semiconductors.
doi_str_mv 10.1088/1674-4926/31/2/024006
format article
fullrecord <record><control><sourceid>iop_chong</sourceid><recordid>TN_cdi_chongqing_backfile_32920848</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>32920848</cqvip_id><sourcerecordid>10_1088_1674_4926_31_2_024006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-4707770775a8e2d8916456ba18049306c46f09bbdab29d3222a0a9008741c3233</originalsourceid><addsrcrecordid>eNptkE9LAzEQxXNQsNR-BCF4dt3Jn2aTYylWC7UVrXgMyW52G2yz62YV-u3dpeKph2GYmfcG3g-hGwL3BKRMich4whUVKSMpTYFyAHGBRv_7KzSJ0VsAJSXrjyP0Mgv4-WO-3iZF3bgCv4UNxd3OB1z6_QGv-6kyEUcXYt1ie8SvC9w6k3f-x-GDqYLr2jrg2Hx3nWt9qK7RZWn20U3--hi9Lx6286dktXlczmerJKcCuoRnkGVDTY10tJCKCD4V1hAJXDEQORclKGsLY6kqGKXUgFEAMuMkZ5SxMbo7_fV1o5vWH0x71ENQPQTVjGiqTwB0U5S9HM7IQQ_cztt6y-3Jku_qUH312bQ1-WfPxWlGFQXJJfsFq2BojQ</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>林伟 黄世震 陈文哲</creator><creatorcontrib>林伟 黄世震 陈文哲</creatorcontrib><description>An MWCNT-doped （multi-walled carbon nanotube） Sn02 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy （SEM） characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs （p-type） and SnO2 （n-type） semiconductors.</description><identifier>ISSN: 1674-4926</identifier><identifier>DOI: 10.1088/1674-4926/31/2/024006</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>X射线光电子能谱 ; 二氧化氮 ; 二氧化锡薄膜 ; 多壁碳纳米管 ; 扫描电子显微镜 ; 掺杂 ; 气体传感器 ; 磁控反应溅射</subject><ispartof>Journal of semiconductors, 2010-02, Vol.31 (2), p.23-28</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/94689X/94689X.jpg</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>林伟 黄世震 陈文哲</creatorcontrib><title>An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering</title><title>Journal of semiconductors</title><addtitle>Chinese Journal of Semiconductors</addtitle><description>An MWCNT-doped （multi-walled carbon nanotube） Sn02 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy （SEM） characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs （p-type） and SnO2 （n-type） semiconductors.</description><subject>X射线光电子能谱</subject><subject>二氧化氮</subject><subject>二氧化锡薄膜</subject><subject>多壁碳纳米管</subject><subject>扫描电子显微镜</subject><subject>掺杂</subject><subject>气体传感器</subject><subject>磁控反应溅射</subject><issn>1674-4926</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNptkE9LAzEQxXNQsNR-BCF4dt3Jn2aTYylWC7UVrXgMyW52G2yz62YV-u3dpeKph2GYmfcG3g-hGwL3BKRMich4whUVKSMpTYFyAHGBRv_7KzSJ0VsAJSXrjyP0Mgv4-WO-3iZF3bgCv4UNxd3OB1z6_QGv-6kyEUcXYt1ie8SvC9w6k3f-x-GDqYLr2jrg2Hx3nWt9qK7RZWn20U3--hi9Lx6286dktXlczmerJKcCuoRnkGVDTY10tJCKCD4V1hAJXDEQORclKGsLY6kqGKXUgFEAMuMkZ5SxMbo7_fV1o5vWH0x71ENQPQTVjGiqTwB0U5S9HM7IQQ_cztt6y-3Jku_qUH312bQ1-WfPxWlGFQXJJfsFq2BojQ</recordid><startdate>20100201</startdate><enddate>20100201</enddate><creator>林伟 黄世震 陈文哲</creator><general>IOP Publishing</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope></search><sort><creationdate>20100201</creationdate><title>An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering</title><author>林伟 黄世震 陈文哲</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-4707770775a8e2d8916456ba18049306c46f09bbdab29d3222a0a9008741c3233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>X射线光电子能谱</topic><topic>二氧化氮</topic><topic>二氧化锡薄膜</topic><topic>多壁碳纳米管</topic><topic>扫描电子显微镜</topic><topic>掺杂</topic><topic>气体传感器</topic><topic>磁控反应溅射</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>林伟 黄世震 陈文哲</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>Journal of semiconductors</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>林伟 黄世震 陈文哲</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering</atitle><jtitle>Journal of semiconductors</jtitle><addtitle>Chinese Journal of Semiconductors</addtitle><date>2010-02-01</date><risdate>2010</risdate><volume>31</volume><issue>2</issue><spage>23</spage><epage>28</epage><pages>23-28</pages><issn>1674-4926</issn><abstract>An MWCNT-doped （multi-walled carbon nanotube） Sn02 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy （SEM） characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs （p-type） and SnO2 （n-type） semiconductors.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-4926/31/2/024006</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1674-4926
ispartof Journal of semiconductors, 2010-02, Vol.31 (2), p.23-28
issn 1674-4926
language eng
recordid cdi_chongqing_backfile_32920848
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects X射线光电子能谱
二氧化氮
二氧化锡薄膜
多壁碳纳米管
扫描电子显微镜
掺杂
气体传感器
磁控反应溅射
title An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T10%3A08%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_chong&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20MWCNT-doped%20SnO2%20thin%20film%20NO2%20gas%20sensor%20by%20RF%20reactive%20magnetron%20sputtering&rft.jtitle=Journal%20of%20semiconductors&rft.au=%E6%9E%97%E4%BC%9F%20%E9%BB%84%E4%B8%96%E9%9C%87%20%E9%99%88%E6%96%87%E5%93%B2&rft.date=2010-02-01&rft.volume=31&rft.issue=2&rft.spage=23&rft.epage=28&rft.pages=23-28&rft.issn=1674-4926&rft_id=info:doi/10.1088/1674-4926/31/2/024006&rft_dat=%3Ciop_chong%3E10_1088_1674_4926_31_2_024006%3C/iop_chong%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c260t-4707770775a8e2d8916456ba18049306c46f09bbdab29d3222a0a9008741c3233%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=32920848&rfr_iscdi=true