Dielectric Properties of GaN in THz Frequencies

The complex refractive indices and the dielectric function of GaN for frequencies ranging from 0.25 to 1.22THz are obtained using THz time-domain spectroscopy. The real part of the dielectric function first decreases from 0.25 to 0.42THz and then oscillates from 0.42 to 1.22THz, whereas the imaginar...

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Bibliographic Details
Published in:Chinese physics letters 2010, Vol.27 (1), p.253-256
Main Author: 方贺男 张荣 刘斌 陆海 丁剑平 谢自力 修向前 郑有炓 肖明文 张彩虹 陈健 吴培亨
Format: Article
Language:English
Subjects:
Defects
Dielectric properties
Dielectrics
Drude模型
Gallium nitrides
Mathematical models
Oscillating
Refractivity
Spectroscopy
介电函数
介电性能
太赫兹时域光谱
实验数据
指数和
氮化镓
频率范围
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Summary:The complex refractive indices and the dielectric function of GaN for frequencies ranging from 0.25 to 1.22THz are obtained using THz time-domain spectroscopy. The real part of the dielectric function first decreases from 0.25 to 0.42THz and then oscillates from 0.42 to 1.22THz, whereas the imaginary part of the dielectric function is oscillating within the whole range of frequency. The simple Drude model is extended to take into account the effect of defects on the dielectric function. The extended model is in agreement with the experimental data.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/1/017802