Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si（111）

Two Ge-induced incommensurate phases, γ and β, on Si（111） are observed and studied by {／it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si（111）-1×1 surface. The β phase consists of two kinds of trian...

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Published in:Chinese physics letters 2010, Vol.27 (2), p.228-231
Main Author: 吴蕊 王立莉 张翼 马旭村 贾金锋 薛其坤
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Language:English
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amp
Si（111）
六角密堆积结构
原子尺度
扫描隧道显微镜
表面断裂
诱导
锗硅
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description Two Ge-induced incommensurate phases, γ and β, on Si（111） are observed and studied by {／it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si（111）-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si（111）-1×1 surface, respectively. In the β phase, two types of domain walls, zigzag＇＇ and face-to-face＇＇, form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.
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subjects amp
Si（111）
六角密堆积结构
原子尺度
扫描隧道显微镜
表面断裂
诱导
锗硅
title Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si（111）
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