Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transm...

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Bibliographic Details
Published in:Chinese physics B 2010-03, Vol.19 (3), p.503-507
Main Author: 孟洋 张培健 刘紫玉 廖昭亮 潘新宇 梁学锦 赵宏武 陈东敏
Format: Article
Language:English
Subjects:
Devices
Electrodes
Indium tin oxide
Stability
Switching
Titanium dioxide
Transmittance
Wavelengths
三明治结构
可见光区
射频磁控溅射方法
显示能力
稳定性
金属制品
随机存取存储器
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Summary:We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/3/037304