A high-performance enhancement-mode AIGaN/GaN HEMT

An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm...

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Bibliographic Details
Published in:Journal of semiconductors 2010 (8), p.45-47
Main Author: 冯志红 谢圣银 周瑞 尹甲运 周伟 蔡树军
Format: Article
Language:Chinese
Subjects:
AlGaN
HEMT器件
增强型
性能
截止频率
电流密度
等离子体处理
阈值电压
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Summary:An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1μm are 10.3 GHz and 12.5 GHz,respectively,which is comparable with the depletion-mode device.A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.
ISSN:1674-4926