In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser

The metal-organic chemical vapor deposition（MOCVD） growth of AlGaN/GaN distributed Bragg reflectors （DBR） with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry.Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the cl...

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Bibliographic Details
Published in:Journal of semiconductors 2010-09, Vol.31 (9), p.53-58
Main Author: 文锋 黄黎蓉 姜波 童梁柱 徐巍 刘德明
Format: Article
Language:English
Subjects:
AlGaN
MOCVD生长
传输矩阵方法
分布布拉格反射镜
原位生长
激光反射
监测
金属有机化学气相沉积法
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Summary:The metal-organic chemical vapor deposition（MOCVD） growth of AlGaN/GaN distributed Bragg reflectors （DBR） with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry.Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method.Two DBR samples,which have the same parameters as the simulated structures,were grown by MOCVD.The simulated and experimental results show that it is possible to evaluate the DBR parameters from the envelope shape of the in situ reflectivity spectrum.With the help of the 633 nm laser reflectometry,a DBR light emitting diode（LED） was grown.The room temperature photoluminescence spectra show that the reflection peak of the DBR in the LED is within the design region.
ISSN:1674-4926
DOI:10.1088/1674-4926/31/9/094010