Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

• Published in: Journal of semiconductors 2011-06, Vol.32 (6), p.69-72
• Main Author: 谢元斌 全思 马晓华 张进城 李青民 郝跃
• Format: Article
• Language: English
• Subjects: AlGaN; Aluminum gallium nitrides; D触发器; Flip-flops; Gallium nitrides; Gates; HEMT器件; High electron mobility transistors; Inverters; Semiconductor devices; Semiconductors; 单片集成; 场效应晶体管; 等离子体处理; 耗尽型; 逻辑电路
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/32/6/065001

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated on an AlGaN/GaN heterostructure.The D flip-flop and NAND gate are demonstrated in a GaN system for the first time.The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate.E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure.At a supply voltage of 2 V,the E/D inverter shows an output logic swing of 1.7 V,a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V.The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.