Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied...

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Bibliographic Details
Published in:半导体学报 2011, Vol.32 (9), p.58-61
Main Author: 吴大卫 贾锐 丁武昌 陈晨 武德起 陈伟 李昊峰 岳会会 刘新宇
Format: Article
Language:Chinese
Subjects:
优化
光伏特性
反射结构
堆放
太阳能电池
测量实验
表面反射
转换效率
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Summary:In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al_2O_3/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.
ISSN:1674-4926