Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi_2 layer synthesized by ion implantation

The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2 layers synthesized by ion implantation,and the roughness of the NiSi2...

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Bibliographic Details
Published in:半导体学报 2011, Vol.32 (10), p.10-13
Main Author: 谭海仁 游经碧 张曙光 高红丽 尹志岗 白一鸣 张秀兰 张兴旺 屈盛
Format: Article
Language:Chinese
Subjects:
ZnO薄膜
光发射
氧化锌
离子注入
紫外发光
耦合
表面等离子体
金属硅化物
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Summary:The calculation results of the surface plasmon（SP） energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling.Experimentally,ZnO films were deposited on NiSi2 layers synthesized by ion implantation,and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm,providing favorable conditions for investigating SP-mediated emission.An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained,which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement.
ISSN:1674-4926