Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

An ultra-low specific on-resistance（R_（on,sp）） silicon-on-insulator（SOI） double-gate trench-type MOSFET （DG trench MOSFET） is proposed.The MOSFET features double gates and an oxide trench：the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is exte...

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Bibliographic Details
Published in:Journal of semiconductors 2011-10, Vol.32 (10), p.49-52
Main Author: 雷天飞 罗小蓉 葛锐 陈曦 王元刚 姚国亮 蒋永恒 张波 李肇基
Format: Article
Language:English
Subjects:
Channels
Drift
Gates
MOSFET
MOSFETs
Oxides
Semiconductors
SOI
Trenches
Voltage
体电阻
击穿电压
双栅
氧化沟
沟槽型
绝缘体上硅
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Summary:An ultra-low specific on-resistance（R_（on,sp）） silicon-on-insulator（SOI） double-gate trench-type MOSFET （DG trench MOSFET） is proposed.The MOSFET features double gates and an oxide trench：the oxide trench is in the drift region,one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide.Firstly,the double gates reduce R_（on,sp） by forming dual conduction channels.Secondly,the oxide trench not only folds the drift region,but also modulates the electric field,thereby reducing device pitch and increasing the breakdown voltage（BV）.A BV of 93 V and a R_（on,sp） of 51.8 mΩ·mm~2 is obtained for a DG trench MOSFET with a 3μm half-cell pitch.Compared with a single-gate SOI MOSFET（SG MOSFET） and a single-gate SOI MOSFET with an oxide trench（SG trench MOSFET）,the R_（on,sp） of the DG trench MOSFET decreases by 63.3%and 33.8% at the same BV,respectively.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/10/104004