Growth and properties of wide spectral white light emitting diodes

• Published in: Chinese physics B 2011-11, Vol.20 (11), p.414-416, Article 116801
• Main Author: 谢自力 张荣 傅德颐 刘斌 修向前 华雪梅 赵红 陈鹏
• Format: Article
• Language: English
• Subjects: Diffraction; Diodes; Emittance; Photoluminescence; Quantum wells; Wells; White light; X-rays; X射线衍射; 光致发光光谱; 化学气相沉积系统; 多量子阱; 宽光谱; 性质; 生长; 白光发光二极管
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/11/116801

Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction t9/2/9 scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400 700 nm, which is almost the whole visible light spectrum.