BORON PROFILING IN SILICON BY 11B（p,α）8Be REACTION AT Ep=2.4MeV

The reaction 11B(p,α) 8Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF2. The experimental results indicate that the behaviour of boron is different from that of fluorine d...

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Bibliographic Details
Published in:核技术：英文版 1990 (Z1), p.62-64
Main Author: 曹建清 朱德彰 杨国华 刘蕙珍 朱福英 潘浩昌
Format: Article
Language:English
Subjects:
Boron
implantation
Ion
profiling
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Summary:The reaction 11B(p,α) 8Be was used to profile boron concentration in silicide. The energy of incident proton of 2.4 MeV was selected. The samples were Ti silicide implanted with 80 keV and 230 keV BF2. The experimental results indicate that the behaviour of boron is different from that of fluorine during silicide formation.
ISSN:1001-8042
2210-3147