Electronic structure of In2O3 nanowires synthesized at low temperature

In2O3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400℃-450℃ using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction a...

Full description

Saved in:
Bibliographic Details
Published in:核技术：英文版 2011-10, Vol.22 (5), p.272-276
Main Author: YUAN Gang GAO Jing SUN Xuhui ZHOU Xingtai
Format: Article
Language:English
Subjects:
XAFS实验
X射线吸收精细结构
低温合成
晶体结构
氧化铟
电子结构
纳米线
高分辨率电子显微镜
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In2O3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400℃-450℃ using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of In2O3 nanowires, compared to that of In2O3 powder, have been studied with X-ray absorption fine structure （XAFS） at In K-edge and O K-edge. The XAFS results reveal the stronger In-O bonding in In2O3 nanowires compared to bulk In2O3.
ISSN:1001-8042
2210-3147