A study of GaN MOSFETs with atomic-layer-deposited A1203 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 3...

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Bibliographic Details
Published in:中国物理：英文版 2012, Vol.21 (1), p.453-457
Main Author: 冯倩 邢韬 王强 冯庆 李倩 毕志伟 张进成 郝跃
Format: Article
Language:English
Subjects:
Al203
MOSFET
偏置电压
原子层沉积
栅介质
氮化镓
设备制造
金属氧化物半导体场效应晶体管
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Summary:Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.
ISSN:1674-1056
2058-3834