Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F：SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogen...

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Bibliographic Details
Published in:中国物理B：英文版 2012-04, Vol.21 (4), p.467-472
Main Author: 张婷 丁玲红 张伟风
Format: Article
Language:English
Subjects:
二氧化锡
低电阻
均匀
开关效应
异质结
接口类型
脉冲激光沉积技术
非易失性存储器
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Summary:La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/21/4/047301