Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

InGaN/GaN epilayers, which are grown on sapphire substrates by the metal-organic chemical-vapour deposition （MOCVD） method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN （0002）...

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Bibliographic Details
Published in:中国物理B：英文版 2012-08, Vol.21 (8), p.511-516
Main Author: 张东炎 郑新和 李雪习 吴渊渊 王辉 王建峰 杨辉
Format: Article
Language:eng ; jpn
Subjects:
GaN纳米棒
InGaN
光学性质
化学气相沉积
应变弛豫
模板
等离子体蚀刻
阵列
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Summary:InGaN/GaN epilayers, which are grown on sapphire substrates by the metal-organic chemical-vapour deposition （MOCVD） method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN （0002） crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature of less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of the high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/21/8/087802