Etching Mechanisms of CF3 Etching Fluorinated Si： Molecular Dynamics Simulation

Molecular dynamics simulations are performed to investigate CF3 continuously bom- barding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the s...

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Bibliographic Details
Published in:等离子体科学和技术：英文版 2012-07, Vol.14 (7), p.670-674
Main Author: 赵成利 邓朝勇 孙伟中 张浚源 陈峰 贺平逆 陈旭 芶富均
Format: Article
Language:English
Subjects:
CF3
仿真结果
分子动力学模拟
机理
硅刻蚀
稳定状态
蚀刻率
表面能量
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Summary:Molecular dynamics simulations are performed to investigate CF3 continuously bom- barding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the steady-state etching rates are about 0.019, 0.085 and 0.1701 for 50 eV, 100 eV and 150 eV, respectively. With increasing incident energy, a transition from C-rich surface to F-rich surface is observed. In the region modified by CF3, SiF and CF species are dominant.
ISSN:1009-0630
DOI:10.1088/1009-0630/14/7/23