Effect of Cu Co-doping on the Magnetism of Zn0.95Coo.050 Films

Zno.95-xCoo.05CuxO （atomic ratio, x = 0-8%） thin films are fabricated on Si（lll） substrate by reactive magnetron sputtering method. Detailed characterizations indicate that the doped Cu ions substitute the Zn2＋ ions in ZnO lattice. The doped Cu ions are in ＋1 and ＋2 mixture valent state. The ferroma...

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Bibliographic Details
Published in:上海交通大学学报：英文版 2012, Vol.17 (6), p.738-742
Main Author: 李建军 朱金波 张丽亭 刘银 郝维昌
Format: Article
Language:English
Subjects:
磁学性质
金属
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Summary:Zno.95-xCoo.05CuxO （atomic ratio, x = 0-8%） thin films are fabricated on Si（lll） substrate by reactive magnetron sputtering method. Detailed characterizations indicate that the doped Cu ions substitute the Zn2＋ ions in ZnO lattice. The doped Cu ions are in ＋1 and ＋2 mixture valent state. The ferromagnetism of the Zno.95-xCoo.o5CuxO film increases gradually with the increase of the Cu＋ ion concentration till x = 6%, but decreases for higher Cu concentration. Experimental results indicate that the increase of ferromagnetism is not owing to the magnetic contribution of Cu＋ ions themselves, but owing to the enhancement of magnetic interaction between Co2＋ ions, which suggests that p-type doping of Cu＋ ions plays an important role in mediating the ferromagnetic coupling between Co ions.
ISSN:1007-1172
1995-8188