Influence of drain bias on the electron mobility in AIGaN/AIN/GaN heterostructure field-effect transistors

• Published in: 中国物理B：英文版 2013 (6), p.518-521
• Main Author: 吕元杰 冯志红 蔡树军 敦少博 刘波 尹甲运 张雄文 房玉龙 林兆军 孟令国 栾崇彪
• Format: Article
• Language: English
• ISSN: 1674-1056; 2058-3834

Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical （LO） phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance （here 4/5）, and the polarization Coulomb field scattering is dominant for the sample with a small ratio （here 1/5）. However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance （here 20 μm） compared with the one with a large distance （here 100 μm）. This is due to the induced strain in the AlGaN layer caused by the drain bias.