Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7

Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films inc...

Full description

Saved in:
Bibliographic Details
Published in:中国物理B：英文版 2013 (9), p.676-679
Main Author: 方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元
Format: Article
Language:English
Subjects:
CdS薄膜
CdTe薄膜
原子力显微镜
电子束蒸发沉积
硫化镉
碲化镉薄膜
薄膜太阳能电池
衬底温度
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 679
container_issue 9
container_start_page 676
container_title 中国物理B：英文版
container_volume
creator 方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元
description Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.
format article
fullrecord <record><control><sourceid>chongqing</sourceid><recordid>TN_cdi_chongqing_primary_47157525</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>47157525</cqvip_id><sourcerecordid>47157525</sourcerecordid><originalsourceid>FETCH-chongqing_primary_471575253</originalsourceid><addsrcrecordid>eNqNjEtqwzAURUVoIW7aPbwuwCB_ZHteXDpP5uFFluNX9KtkB7KVrqV76hbimJBxRvdyzuWuWJJz0aRFU5RPLMmqukwzLqo1e4nxm_Mq43mRsKnVSo7BWTgoNKBO6F3AkWbQKe8iLdX1ILEzNBmIk_YDdQrQdnc4Kq2ncKXjQBZ60ib-__3C1mkMIGcL6L0muTzH-pU996ijervlhr1_truPr1QOzh5_yB73PpDBcN6XdSZqkYvikc0FbxROtA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7</title><source>Institute of Physics</source><creator>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</creator><creatorcontrib>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</creatorcontrib><description>Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><language>eng</language><subject>CdS薄膜 ; CdTe薄膜 ; 原子力显微镜 ; 电子束蒸发沉积 ; 硫化镉 ; 碲化镉薄膜 ; 薄膜太阳能电池 ; 衬底温度</subject><ispartof>中国物理B：英文版, 2013 (9), p.676-679</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85823A/85823A.jpg</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids></links><search><creatorcontrib>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</creatorcontrib><title>Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7</title><title>中国物理B：英文版</title><addtitle>Chinese Physics</addtitle><description>Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.</description><subject>CdS薄膜</subject><subject>CdTe薄膜</subject><subject>原子力显微镜</subject><subject>电子束蒸发沉积</subject><subject>硫化镉</subject><subject>碲化镉薄膜</subject><subject>薄膜太阳能电池</subject><subject>衬底温度</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqNjEtqwzAURUVoIW7aPbwuwCB_ZHteXDpP5uFFluNX9KtkB7KVrqV76hbimJBxRvdyzuWuWJJz0aRFU5RPLMmqukwzLqo1e4nxm_Mq43mRsKnVSo7BWTgoNKBO6F3AkWbQKe8iLdX1ILEzNBmIk_YDdQrQdnc4Kq2ncKXjQBZ60ib-__3C1mkMIGcL6L0muTzH-pU996ijervlhr1_truPr1QOzh5_yB73PpDBcN6XdSZqkYvikc0FbxROtA</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope></search><sort><creationdate>2013</creationdate><title>Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7</title><author>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-chongqing_primary_471575253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CdS薄膜</topic><topic>CdTe薄膜</topic><topic>原子力显微镜</topic><topic>电子束蒸发沉积</topic><topic>硫化镉</topic><topic>碲化镉薄膜</topic><topic>薄膜太阳能电池</topic><topic>衬底温度</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</creatorcontrib><collection>维普_期刊</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>维普中文期刊数据库</collection><collection>中文科技期刊数据库- 镜像站点</collection><jtitle>中国物理B：英文版</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>方力 陈婧 徐岭 苏为宁 于瑶 徐骏 马忠元</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7</atitle><jtitle>中国物理B：英文版</jtitle><addtitle>Chinese Physics</addtitle><date>2013</date><risdate>2013</risdate><issue>9</issue><spage>676</spage><epage>679</epage><pages>676-679</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 1674-1056
ispartof 中国物理B：英文版, 2013 (9), p.676-679
issn 1674-1056
2058-3834
language eng
recordid cdi_chongqing_primary_47157525
source Institute of Physics
subjects CdS薄膜
CdTe薄膜
原子力显微镜
电子束蒸发沉积
硫化镉
碲化镉薄膜
薄膜太阳能电池
衬底温度
title Electron beam evaporation deposition of cadmium sulphide and cadmium telluride thin films： Solar cell applications7
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T20%3A33%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-chongqing&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20beam%20evaporation%20deposition%20of%20cadmium%20sulphide%20and%20cadmium%20telluride%20thin%20films%EF%BC%9A%20Solar%20cell%20applications7&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%9A%E8%8B%B1%E6%96%87%E7%89%88&rft.au=%E6%96%B9%E5%8A%9B%20%E9%99%88%E5%A9%A7%20%E5%BE%90%E5%B2%AD%20%E8%8B%8F%E4%B8%BA%E5%AE%81%20%E4%BA%8E%E7%91%B6%20%E5%BE%90%E9%AA%8F%20%E9%A9%AC%E5%BF%A0%E5%85%83&rft.date=2013&rft.issue=9&rft.spage=676&rft.epage=679&rft.pages=676-679&rft.issn=1674-1056&rft.eissn=2058-3834&rft_id=info:doi/&rft_dat=%3Cchongqing%3E47157525%3C/chongqing%3E%3Cgrp_id%3Ecdi_FETCH-chongqing_primary_471575253%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_cqvip_id=47157525&rfr_iscdi=true