Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs

The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly...

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Published in:半导体学报：英文版 2014 (1), p.61-64
Main Author: 王冲 陈冲 何云龙 郑雪峰 马晓华 张进成 毛维 郝跃
Format: Article
Language:English
Subjects:
AlGaN
HEMT器件
击穿电压
反向漏电流
电流崩塌
等离子体处理
饱和电流
高电子迁移率晶体管
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description The breakdown and the current collapse characteristics of high electron mobility transistors （HEMTs） with a low power F-plasma treatment process are investigated. With the increase of F-plasma treatment time, the saturation current decreases, and the threshold voltage shifts to the positive slightly. Through analysis of the Schottky characteristics of the devices with different F-plasma treatment times, it was found that an optimal F-plasma treatment time of 120 s obviously reduced the gate reverse leakage current and improved the breakdown voltage of the devices, but longer F-plasma treatment time than 120 s did not reduce gate reverse leakage current due to plasma damage. The current collapse characteristics of the HEMTs with F-plasma treatment were evaluated by dual pulse measurement at different bias voltages and no obvious deterioration of current collapse were found after low power F-plasma treatment.
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subjects AlGaN
HEMT器件
击穿电压
反向漏电流
电流崩塌
等离子体处理
饱和电流
高电子迁移率晶体管
title Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs
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